ID: 1995036 |
Advances and prospects in Ga<inf>2</inf>O<inf>3</inf>/GaN heterojunctions: From fabrication to high-performance devices / Xu, Kaicheng (Autor) (11.111%) ; Wang, Rui (Autor) (11.111%) ; Wang, Yixuan (Autor) (11.111%) ; Wang, Jin (Autor) (11.111%) ; Zhi, Ting (Autor) (11.111%) ; Yang, Guofeng (Autor) (11.111%) ; Xue, Junjun (Autor) (11.111%) ; Chen, Dunjun (Autor) (11.111%) ; Zhang, Rong (Autor) (11.112%). – DOI 10.1016/j.mssp.2024.108874. – SCO ; WOS CC
In: Materials Science in Semiconductor Processing [textový dokument (print)] [elektronický dokument] : Functional Materials for (Opto)electronics, Sensors, Detectors, Biotechnology, and Green Energy. – Amsterdam (Holandsko) : Elsevier, Oxon (Veľká Británia) : Elsevier. – ISSN 1369-8001. – ISSN (online) 1873-4081. – Roč. 185 (2025), art. no. 108874 [tlačená forma] [online]